SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

ABSTRACT

A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Rule 53(b) Continuation of U.S. application Ser.No. 17/879,474 filed Aug. 2, 2022, claiming priority based on JapanesePatent Application No. 2021-128273 filed Aug. 4, 2021, the respectivedisclosures of all of the above of which are incorporated herein byreference in their entirety.

BACKGROUND OF THE INVENTION Field of the Invention

The present disclosure relates to a SiC epitaxial wafer and a method ofmanufacturing a SiC epitaxial wafer.

Description of Related Art

Silicon carbide (SiC) has an insulation breakdown electric field that isan order of magnitude larger than silicon (Si), a band gap that is threetimes larger than silicon (Si), and a thermal conductivity that is aboutthree times higher than silicon (Si). Silicon carbide (SiC) is expectedto be applied to power devices, high frequency devices, high temperatureoperation devices and the like.

In order to promote practical use of SiC devices, it is required toestablish high-quality SiC epitaxial wafers and high-quality epitaxialgrowth techniques.

The SiC device is formed on a SiC epitaxial wafer. The SiC epitaxialwafer includes an SiC substrate and an epitaxial layer laminated on theSiC substrate. The SiC substrate is obtained by processing a bulk singlecrystal of SiC grown by a sublimation recrystallization method or thelike. The epitaxial layer is formed by chemical vapor deposition (CVD)or the like, and serves as an active region of the device.

The epitaxial layer may have an impurity element which determines theconductivity type of the epitaxial layer and boron which has aconductivity type different from the conductivity type of the impurityelement (for example, Patent Literatures 1˜3). Boron may reduce theeffective carrier concentration in the drift layer and may result in ashorter carrier lifetime of the bipolar device.

Since boron is contained in a member or the like used for manufacturinga SiC epitaxial wafer, it is difficult to completely remove it. If thereis a portion with a high concentration of boron in the epitaxial layer,it is difficult to apply the portion to a device in general. The higherthe proportion of the portion where the concentration of boron is highin the plane of the epitaxial wafer, the smaller the effective area thatcan be applied to the device in general. Patent Literatures 1-3 do notdescribe in-plane uniformity of boron concentration in an epitaxiallayer.

CITATION LIST Patent Literature [Patent Literature 1]

Japanese Unexamined Patent Application, First Publication No.2019-121690

[Patent Literature 2]

PCT International Publication No. 2006/008941

[Patent Literature 3]

PCT International Publication No. 2018/193664

SUMMARY OF THE INVENTION

A first aspect of the present disclosure provides a SiC epitaxial waferincluding a SiC substrate and an epitaxial layer of SiC laminated on theSiC substrate, wherein the epitaxial layer contains an impurity elementwhich determines the conductivity type of the epitaxial layer and boronwhich has a conductivity type different from the conductivity type ofthe impurity element, and the concentration of boron is less than1.0×10¹⁴ cm⁻³ at any position in the plane of the epitaxial layer.

In the SiC epitaxial wafer according to the first aspect, the diametermay be 150 mm or more.

In the SiC epitaxial wafer according to the first aspect, the diametermay be 200 mm or more.

A second aspect of the present disclosure provides a method ofmanufacturing a SiC epitaxial wafer including a film-forming step offorming an epitaxial layer of SiC on a SiC substrate using a verticalfurnace having a gas supply port above a mounting surface of the SiCsubstrate, wherein the film-forming step comprises a temperature raisingstep of raising the temperature to a film-forming temperature whilechanging the temperature raising speed in the order of a firsttemperature raising speed, a second temperature raising speed, and athird temperature raising speed, wherein the first temperature raisingspeed is faster than the second temperature raising speed, the secondtemperature raising speed is faster than the third temperature raisingspeed, and the first temperature raising speed is 100° C./min or more.

In the method of manufacturing a SiC epitaxial wafer according to thesecond aspect, in the mounting surface of the SiC substrate, the heightposition of the center may be 30 μm or more higher than the heightposition of the outer periphery at the film-forming temperature.

In the method of manufacturing a SiC epitaxial wafer according to thesecond aspect, in the film-forming step, a purge gas may be suppliedfrom the back surface of the SiC substrate, and the purge gas may besupplied from a position 20 mm or more inside the outer periphery of theSiC substrate.

In the method of manufacturing a SiC epitaxial wafer according to thesecond aspect, the time required for the temperature raising step may be300 seconds or more and 750 seconds or less.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a SiC epitaxial wafer according tothe first embodiment.

FIG. 2 is a plan view of the SiC epitaxial wafer according to the firstembodiment.

FIG. 3 is a schematic view of a film-forming apparatus for the SiCepitaxial wafer according to the first embodiment.

FIG. 4 is an example of the film-forming process of the SiC epitaxialwafer according to the first embodiment.

FIG. 5 is an enlarged view of the vicinity of the SiC substrate of thefilm-forming apparatus for the SiC epitaxial wafer according to thefirst embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, this embodiment will be described in detail with referenceto the drawings. The drawings used in the following description mayshow, for convenience's sake, the features of the present disclosure inenlarged form, and the dimensional proportions of the components may bedifferent from those in practice. The materials, dimensions, and thelike exemplified in the following description are only examples, and thepresent disclosure is not limited thereto, and the disclosure can becarried out by appropriately changing the gist thereof without changingit.

FIG. 1 is a cross-sectional view of a SiC epitaxial wafer 10 accordingto the first embodiment. FIG. 2 is a plan view of the SiC epitaxialwafer 10 according to the first embodiment. The SiC epitaxial wafer 10has a SiC substrate 1 and an epitaxial layer 2 thereon. The SiCepitaxial wafer 10 is, for example, a disk having a diameter of 150 mmor more. The diameter of the SiC epitaxial wafer 10 may be 200 mm ormore.

The SiC substrate 1 is cut out from, for example, a SiC ingot. The SiCingot is grown on a SiC seed crystal using, for example, a sublimationmethod. In the SiC substrate 1, for example, a surface having an offsetangle in the <11-20>direction from (0001) is used as a growth surface.The SiC substrate 1 contains impurities. The impurity is, for example,nitrogen.

The SiC substrate 1 has, for example, a circular shape in plan view. Thediameter of the SiC substrate 1 is, for example, 150 mm or more. Aportion of the circle of the SiC substrate 1 may be cut off. The notchedportion is referred to as the orientation flat OF. The orientation flatOF is used to confirm the orientation or the like of the SiC substrate1.

The epitaxial layer 2 is laminated on the SiC substrate 1. The epitaxiallayer 2 is formed by, for example, chemical vapor deposition (CVD). Theepitaxial layer 2 is a single crystal film of SiC. The epitaxial layer 2may be composed of, for example, a plurality of layers. For example, theepitaxial layer 2 may be composed of a plurality of SiC single crystalfilms having different impurity concentrations.

The epitaxial layer 2 includes an impurity element for determining aconductivity type of the epitaxial layer 2 and boron. The impurityelement for determining the conductivity type is, for example, nitrogen.The conductivity type of nitrogen is n-type. The impurity concentrationof the impurity determining the conductivity type of the epitaxial layer2 is, for example, 1.0×10¹⁴ cm⁻³ or more and 3.0×10¹⁶ cm⁻³ or less,preferably 1.0×10¹⁴ cm⁻³ or more and 3.0×10¹⁵ cm⁻³ or less. The in-planeuniformity of the impurity concentration determining the conductivitytype in the epitaxial layer 2 is preferably, for example, 20% or less,and more preferably 10% or less. The in-plane uniformity of the impurityconcentration is obtained, for example, from the results of 10 or moremeasurement points in the radial direction passing through the center ofthe SiC epitaxial wafer. The in-plane uniformity of the impurityconcentration determining the conductivity type is a value obtained bydividing the difference between the maximum value and the minimum valueof the impurity concentration among the plurality of measurement pointsby the average value of the impurity concentration among the pluralityof measurement points. The measurement points may be arranged in adirection parallel to the orientation flat OF, in a directionperpendicular to the orientation flat OF, or in directions parallel toand perpendicular to the orientation flat OF.

Boron shows a conductivity type different from that of nitrogen. Theconductive type of boron is p-type. Boron is not intentionally doped inthe epitaxial layer 2, but when the epitaxial layer 2 is formed, boroncontained in a susceptor or the like in the film-forming apparatus ismixed as an impurity. Boron can cause a decrease in an effective carrierconcentration and can also suppress the conductivity modulation effectof the bipolar device. The concentration of boron in the epitaxial layer2 is preferably small, but it is difficult to completely remove boron.

The concentration of boron is less than 1.0×10¹⁴ cm⁻³ at any position inthe plane of the epitaxial layer 2. The concentration of boron tends tobe higher in the outer portion of the epitaxial layer 2 than on thecenter thereof If the concentration of boron at the center p1 of theepitaxial layer 2 and at the four points p2 which are 5 mm inside fromthe outer periphery is within the above range, it can be regarded thatthe concentration of boron at any position in the plane is within theabove range. Note that a range of 5 mm inside from the outer peripherymay often not be regarded as an effective area of the device. Therefore,the range of 5 mm inside from the outer periphery is often negligible.

The concentration of impurities and boron in each layer can be measuredby, for example, a mercury probe (Hg-CV) method or secondary ion massspectrometry (SIMS).

In the Hg-CV method, the difference (Nd—Na) between the donorconcentration Nd and the acceptor concentration Na is measured as ann-type impurity concentration. If the acceptor concentration issufficiently small compared to the donor concentration, the differencebetween these concentrations can be regarded as the n-type impurityconcentration.

Secondary ion mass spectrometry (SIMS) is a method of performing massspectrometry on secondary ions that have popped out while dogging alayer in the thickness direction. The doping concentration can bemeasured from mass spectrometry.

The measurement points of the impurity and boron concentrations may beany points as long as the distribution in the wafer surface can bereflected. Preferably, points less than 5 mm from the edge of the waferare not included in the measurement points. For example, a plurality ofpoints are measured in the cross direction with the center of the waferas the origin. For example, in the case of a 6 inch wafer, measurementsare made at a total of 21 points consisting of 5 points in each of the 4directions of the cross with the origin at the center of the wafer.

Next, a method of manufacturing a SiC epitaxial wafer according to thefirst embodiment will be described. First, an SiC substrate 1 isprepared. The SiC substrate 1 is obtained by cutting the SiC ingot witha predetermined thickness. The SiC substrate 1 may be purchased forsale.

Next, a film-forming step of forming an epitaxial layer 2 on the SiCsubstrate 1 is performed. The epitaxial layer 2 is formed by, forexample, CVD.

FIG. 3 is a schematic view of an example of a film-forming apparatus 100for a SiC epitaxial wafer 10 according to the first embodiment. Thefilm-forming apparatus 100 includes, for example, a chamber 20, asupport 30, a susceptor 40, a lower heater 50, and an upper heater 60.FIG. 3 shows a state in which the SiC substrate 1 is mounted on thesusceptor 40. The film-forming apparatus 100 is a vertical furnacehaving a gas supply port 22 above the mounting surface of the SiCsubstrate 1.

The chamber 20 has, for example, a body 21, a gas supply port 22, and agas discharge port 23. The main body 21 surrounds the film-forming spaceS. The gas supply port 22 is an inlet for supplying the film-forming gasG to the film-forming space S. The gas supply port 22 is located, forexample, above the mounting surface of the SiC substrate 1. The gasdischarge port 23 is an outlet for discharging the film-forming gas Gand the like retained in the film-forming space S. The gas dischargeport 23 is located, for example, below the mounting surface of the SiCsubstrate 1. The film-forming gas G is, for example, a Si-based gas, aC-based gas, a purge gas, and a dopant gas.

The Si-based gas is a source gas containing Si in the molecule. TheSi-based gas is, for example, silane (SiH₄), dichlorosilane (SiH₂Cl₂),trichlorosilane (SiHCl₃), tetrachlorosilane (SiCl₄) or the like. TheC-based gas is, for example, propane (C₃H₈), ethylene (C₂H₄) or thelike. The dopant gas is a gas containing an element serving as acarrier. The dopant gas is, for example, nitrogen, ammonia or the like.The purge gas is a gas for conveying these gases to the SiC substrate 1,and is hydrogen or the like that is inert to SiC.

The support 30 supports the SiC substrate 1. The support 30 is rotatableabout an axis.

The SiC substrate 1 is placed on the support 30, for example, in a statewhere the SiC substrate 1 is mounted on the susceptor 40. The susceptor40 is conveyed into the chamber 20 with the SiC substrate 1 mountedthereon. The lower heater 50 is provided, for example, in the support 30and heats the SiC substrate 1. An upper heater 60 heats the upper partof the chamber 20. The member exposed in the film-forming space S is,for example, a carbon member, and its surface may be coated with SiC orTaC.

The film-forming step is performed, for example, in a vertical furnaceshown in FIG. 3 . FIG. 4 is an example of a manufacturing process of theSiC epitaxial wafer 10 according to the first embodiment. Thefilm-forming step includes a temperature raising step RS for raising thetemperature to the film-forming temperature T1. After the temperatureraising step, the film-forming temperature T1 is maintained to form theepitaxial layer 2. The film-forming temperature T1 is, for example,1500° C. or more.

The time required for the temperature raising step RS is, for example,300 seconds or more and 750 seconds or less. When the time required forthe temperature raising process RS is short, the strain of the SiCsubstrate 1 and the susceptor 40 increases, and the in-plane uniformityof the epitaxial layer 2 deteriorates. In addition, if the time requiredfor the temperature raising process RS is short, the film-forming gas isrolled back due to convection caused by the temperature difference inthe plane of the susceptor 40, and boron discharged from the susceptor40 is taken into the wafer. When the time required for the temperatureraising process RS is long, the amount of boron discharged from themember used in the film-forming apparatus 100 increases.

The temperature raising step RS includes, for example, a firsttemperature raising step S1, a second temperature raising step S2, and athird temperature raising step S3. The first temperature raising stepS1, the second temperature raising step S2, and the third temperatureraising step S3 have different temperature raising speeds. In thetemperature raising step RS, the temperature raising speed may bechanged twice or more, and further steps having different temperatureraising speeds such as a fourth temperature raising step and a fifthtemperature raising step may be included.

In the first temperature raising step S1, the temperature is raised at afirst temperature raising speed. The first temperature rising speed is100° C./min or more. The first temperature raising speed is faster thanthe second temperature raising speed in the second temperature raisingstep S2. In the first temperature raising step S1, the temperature israised to, for example, about 1200° C.

The second temperature raising step S2 is performed after the firsttemperature raising step S1 and before the third temperature raisingstep S3. The second temperature raising step S2 is performed at a secondtemperature raising speed. The second temperature raising speed isslower than the first temperature raising speed and faster than thethird temperature raising speed. The second temperature rising speed is,for example, 90% or less of the first temperature rising speed. In thesecond temperature raising step S2, the temperature is raised to, forexample, about 1400° C.

The third temperature raising step S3 is performed after the secondtemperature raising step S2. The third temperature raising step S3 isperformed at a third temperature raising speed. The third temperatureraising speed is slower than the second temperature raising speed. Thethird temperature raising speed is, for example, 90% or less of thesecond temperature raising speed.

The time required for the entire temperature raising process RS can beshortened by increasing the first temperature raising speed. When thetime required for the entire temperature raising process RS becomesshorter, the amount of boron released from the film-forming apparatus100 is reduced. Further, by gradually slowing down the temperatureraising speed, it is possible to suppress the strain of the SiCsubstrate 1 and the susceptor 40 from becoming too large.

FIG. 5 is an enlarged view of the vicinity of the SiC substrate 1 in thefilm-forming apparatus for the SiC epitaxial wafer according to thefirst embodiment. The SiC substrate 1 is placed on a susceptor 40. Thesusceptor 40 has, for example, a support portion 41, an outer peripheralportion 42, and a through hole 43.

The SiC substrate 1 is mounted on the support portion 41. The outerperipheral portion 42 prevents the SiC substrate 1 from protruding tothe outside during film formation. The outer peripheral portion 42 maybe, for example, a separate ring-shaped member. The through hole 43 is ahole connecting the upper surface and the lower surface of the supportportion 41.

The difference between the height position of the center of the mountingsurface of the SiC substrate 1 and the height position of the outermostperiphery is referred to as the height difference Δh. The heightdifference Δh can be measured by, for example, a laser displacementmeter. First, a measurement port and a laser displacement meter areinstalled at the center and the outer periphery portion of the susceptorat the upper part of the furnace, and the warpage of the susceptor ismeasured by determining the difference in height between the centerportion and the outer periphery portion at the film-forming temperaturewithout installing a wafer. Then, a wafer is mounted on the susceptor,and the measurement is performed under the same conditions as when thewarpage is measured without mounting the wafer, so that the heightdifference Δh can be measured. By forming the film while measuring theheight difference Δh, an arbitrary height difference Δh can bemaintained. Further, by selecting the wavelength of the laser lightsource, the warpage of the susceptor can be measured while the wafer ismounted. For example, in the case of a SiC wafer, when the wavelength ofthe laser light source is 600 nm or more, the laser passes through theSiC wafer, so that the warpage of the susceptor can be measured whilethe wafer is mounted. The height difference Δh at the time offilm-forming is preferably 30 μm or more. That is, at the film-formingtemperature T1, the height position of the center of the mountingsurface of the SiC substrate 1 is preferably 30 μm or more higher thanthe height position of the outermost periphery. The height difference Δhat the film-forming temperature T1 is preferably 100 μm or less.

The range of the height difference Δh may be satisfied as long as it issatisfied at the film-forming temperature T1, and may not be satisfiedat the ordinary temperature. When there is an outer peripheral portion42, the boundary between the outer peripheral portion 42 and themounting surface is the outermost periphery of the mounting surface.

The height difference Δh can be controlled by, for example, afilm-forming condition. The difference Δh tends to increase as thetemperature raising speed is fast. In addition, the height difference Δhmay be adjusted by the material constituting the susceptor 40. Forexample, the susceptor 40 may be made of two or more materials havingdifferent coefficients of thermal expansion, and the difference inheight Δh may be adjusted using the difference in the coefficients ofthermal expansion.

When the height difference Δh becomes large, the film-forming gas Gflows from the center of the SiC substrate 1 to the outside in thevicinity of the upper surface of the SiC substrate 1, and it is possibleto prevent the film-forming gas G from rolling back or the like. Therewinding of the film-forming gas G causes boron and unreacted gasreleased from the susceptor 40 or the like to be taken into theepitaxial layer 2. When the flow of the film-forming gas G from thecenter to the outside of the SiC substrate 1 is formed in the vicinityof the upper surface of the SiC substrate 1, the concentration of boroncontained in the epitaxial layer 2 is lowered. If the height differenceΔh is within a predetermined range, the difference in the film-formingconditions between the center and the outer peripheral portion of theepitaxial layer 2 is small, and the in-plane uniformity of the epitaxiallayer 2 is enhanced.

Gas may be supplied to the back surface of the SiC substrate 1 via thethrough hole 43. The gas supplied to the back surface side of the SiCsubstrate 1 prevents the film-forming gas G from flowing into the backsurface of the SiC substrate 1. The gas supplied to the back surface isa purge gas that is inert to SiC.

The purge gas is preferably supplied toward the back surface of the SiCsubstrate 1 from a position 20 mm or more inside the outermost peripheryof the SiC substrate 1. For example, the distance d between the throughhole 43 and the outermost periphery is preferably 20 mm or more. Whenthe supply position of the purge gas to the back surface of the SiCsubstrate 1 satisfies the above condition, the flow of the film-forminggas G can be suppressed from being disturbed by the purge gas from theback surface.

Through the above process, a SiC epitaxial wafer 10 having a boronconcentration of 1.0×10¹⁴ cm⁻³ or less at any position in the plane isproduced.

Since the concentration of boron in the SiC epitaxial wafer 10 accordingto the present embodiment is 1.0×10¹⁴ cm⁻³ or less, the carrier lifetimeafter device processing can be prolonged. If the carrier lifetime islong, a sufficient conductivity modulation effect can be obtained in thebipolar device.

The lower the impurity concentration determining the conductivity typeof the epitaxial layer 2, the greater the effect is. For example, whenthe concentration of nitrogen is 1.0×10¹⁵ cm⁻³ and the concentration ofboron is 1.0×10¹⁴ cm⁻³ in the epitaxial layer 2, boron occupies a ratioof 10% to nitrogen for determining the conductivity type. In this case,the adverse effect caused by the presence of boron increases. In otherwords, in the epitaxial layer 2 having a low impurity concentration fordetermining the conductivity type, it is valuable to have a lowconcentration of boron.

Although preferred embodiments of the present disclosure have beendescribed in detail above, the present disclosure is not limited tospecific embodiments, and various modifications and modifications can bemade within the scope of the subject matter of the present disclosuredescribed in the claims.

EXAMPLES Example 1

SiC substrates of 150 mm in diameter were prepared. The epitaxial layer2 was formed on the SiC substrate 1 using a vertical furnace similar tothe film-forming apparatus 100 shown in FIG. 3 . The temperature raisingstep was divided into three steps, and the temperature raising speed waschanged twice. The first temperature raising speed was 100° C./min ormore. The second temperature raising speed was set to be less than 80%of the first temperature raising speed. The third temperature raisingspeed was set to be less than 80% of the second temperature raisingspeed. The film-forming temperature was 1600° C. or higher and less than1700° C. The time required for temperature rise was 300 seconds or moreand less than 750 seconds.

When the epitaxial layer 2 was formed, purge gas was supplied from theback surface side of the SiC substrate 1. The purge gas was supplied soas to hit a position 20 mm or more inside the outer periphery of the SiCsubstrate 1. In the temperature range of 1600° C. or higher and lessthan 1700° C., the height position of the center of the mounting surfaceof the SiC substrate 1 was set to be 30 μm or more higher than theheight position of the outermost periphery.

After production, the concentration of boron at the center p1 of the SiCepitaxial wafer and the concentration of boron at four points p2 whichare 5 mm inside from the outer periphery were measured. Theconcentration of boron at the center p1 of Example 1 was 5.0×10¹³ cm⁻³,and the boron concentration at the point p2 was 9.0×10¹³ cm⁻³.Therefore, the SiC epitaxial wafer according to Example 1 had a boronconcentration of less than 1.0×10¹⁴ cm⁻³ at any position in the plane.

Comparative Example 1

SiC substrates of 150 mm in diameter were prepared. In ComparativeExample 1, a horizontal furnace having a gas supply port on the side ofthe SiC substrate was used. Then, an epitaxial layer 2 was formed on theSiC substrate 1 using a horizontal furnace. The temperature raisingprocess was one step, and the temperature raising speed was not changed.The temperature raising speed was set to 100° C./min or less. Thefilm-forming temperature was 1600° C. or higher and less than 1700° C.The time required for temperature rise was more than 750 seconds.

In the comparative example, no purge gas was supplied to the backsurface side of the SiC substrate 1. Since the temperature raising speedis slower than that of the Example, the height position of the center ofthe mounting surface of the SiC substrate 1 was less than 30 μm from theheight position of the outermost periphery in a temperature range of1600° C. or higher and less than 1700° C.

After production, the concentration of boron at the center p1 of the SiCepitaxial wafer of Comparative Example 1 and the concentration of boronat four points p2 which are 5 mm inside from the outer periphery weremeasured. The concentration of boron at the center p1 of ComparativeExample 1 was 9.2×10¹⁴ cm⁻³, and the concentration of boron at the pointp2 was 8.1×10¹³ cm⁻³. Therefore, the SiC epitaxial wafer according toComparative Example 1 had portions where the concentration of boron was1.0×10¹⁴ cm⁻³ or more.

What is claimed is:
 1. A SiC epitaxial wafer, comprising: a SiC substrate; and, an epitaxial layer of SiC laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×10¹⁴ cm⁻³ at the center of the epitaxial layer and at a plurality of points which are 5 mm inside from the outer periphery of the epitaxial layer.
 2. The SiC epitaxial wafer according to claim 1, wherein the plurality of points are arranged in a direction passing through the center of the SiC epitaxial wafer and in a direction parallel or perpendicular to the orientation flat OF.
 3. The SiC epitaxial wafer according to claim 1, wherein the plurality of points are arranged in the cross direction with the center of the SiC epitaxial wafer as the origin.
 4. The SiC epitaxial wafer according to claim 1, wherein the plurality of points are arranged in a radial direction passing through the center of the SiC epitaxial wafer.
 5. The SiC epitaxial wafer according to claim 1, wherein the plurality of points are four points.
 6. The SiC epitaxial wafer according to claim 5, wherein the four points are arranged in a direction passing through the center of the SiC epitaxial wafer and in a direction parallel or perpendicular to the orientation flat OF.
 7. The SiC epitaxial wafer according to claim 5, wherein the four points are arranged in the cross direction with the center of the SiC epitaxial wafer as the origin.
 8. The SiC epitaxial wafer according to claim 5, wherein the four points are arranged in a radial direction passing through the center of the SiC epitaxial wafer.
 9. The SiC epitaxial wafer according to claim 1, wherein the diameter is 150 mm or more.
 10. The SiC epitaxial wafer according to claim 2, wherein the diameter is 150 mm or more.
 11. The SiC epitaxial wafer according to claim 3, wherein the diameter is 150 mm or more.
 12. The SiC epitaxial wafer according to claim 4, wherein the diameter is 150 mm or more.
 13. The SiC epitaxial wafer according to claim 5, wherein the diameter is 150 mm or more.
 14. The SiC epitaxial wafer according to claim 1, wherein the diameter is 200 mm or more.
 15. The SiC epitaxial wafer according to claim 2, wherein the diameter is 200 mm or more.
 16. The SiC epitaxial wafer according to claim 3, wherein the diameter is 200 mm or more.
 17. The SiC epitaxial wafer according to claim 4, wherein the diameter is 200 mm or more.
 18. The SiC epitaxial wafer according to claim 5, wherein the diameter is 200 mm or more. 